Manufacturer | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Image | PART NUMBER | Manufacturer | IN STOCK | PACKING | Description | RFQ |
---|---|---|---|---|---|---|
IXTA230N075T2 |
IXYS | 150 | Tube | MOSFET N-CH 75V 230A TO263 |
RFQ |
|
![]() |
IXTQ110N10P |
IXYS | 3427 | Tube | MOSFET N-CH 100V 110A TO3P |
RFQ |
![]() |
FQL50N40 |
Fairchild Semiconductor | 338 | Tube | MOSFET N-CH 400V 50A TO264-3 |
RFQ |
![]() |
IXTK102N30P |
IXYS | 2165 | Tube | MOSFET N-CH 300V 102A TO264 |
RFQ |
![]() |
IMW65R057M1HXKSA1 |
Infineon Technologies | 2038 | Tube | SILICON CARBIDE MOSFET, PG-TO247 |
RFQ |
![]() |
APT6025BVRG |
Microchip Technology | 3243 | Tube | MOSFET N-CH 600V 25A TO247 |
RFQ |
![]() |
NTE454 |
NTE Electronics, Inc | 3380 | Bag | MOSFET-DUAL GATE N-CH |
RFQ |
![]() |
2N6760TXV |
Harris Corporation | 471 | Bulk | 5.5A, 400V, 1OHM, N-CHANNEL |
RFQ |
![]() |
IXTH44P15T |
IXYS | 3128 | Tube | MOSFET P-CH 150V 44A TO247 |
RFQ |
![]() |
IMZA65R057M1HXKSA1 |
Infineon Technologies | 3723 | Tube | SILICON CARBIDE MOSFET, PG-TO247 |
RFQ |
![]() |
2SK2371-A |
Renesas Electronics America Inc | 302 | Bulk | N-CHANNEL POWER MOSFET |
RFQ |
![]() |
2SK1285-AZ |
Renesas Electronics America Inc | 700 | Bulk | N-CHANNEL POWER MOSFET |
RFQ |
![]() |
TW048N65C,S1F |
Toshiba Semiconductor and Storage | 2174 | Tube | G3 650V SIC-MOSFET TO-247 48MOH |
RFQ |
![]() |
NTE464 |
NTE Electronics, Inc | 3957 | Bag | MOSFET-P CHANNEL AMP/SW |
RFQ |
![]() |
IRF362 |
International Rectifier | 160 | Bulk | N-CHANNEL HERMETIC MOS HEXFET |
RFQ |
APT38F80B2 |
Microchip Technology | 2446 | Tube | MOSFET N-CH 800V 41A T-MAX |
RFQ |
|
![]() |
IXTH60N20L2 |
IXYS | 3261 | Tube | MOSFET N-CH 200V 60A TO247 |
RFQ |
![]() |
FDH50N50 |
Fairchild Semiconductor | 761 | Tube | MOSFET N-CH 500V 48A TO247-3 |
RFQ |
![]() |
4AM14 |
Renesas Electronics America Inc | 202 | Bulk | P-CHANNEL POWER MOSFET |
RFQ |
![]() |
IXFR44N80P |
IXYS | 2481 | Tube | MOSFET N-CH 800V 25A ISOPLUS247 |
RFQ |
Mainland Office: 4507,Duhuixuan, No.3018 Shennan Avenue,Huahang Community, Huaqiang North Street,Futian District,Shenzhen,China
Hong Kong:FLAT/RM 1101D11/FLIPPO SUN PLAZA28 CANTON ROADTSIM SHA TSUI KL
Tel