Manufacturer | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Image | PART NUMBER | Manufacturer | IN STOCK | PACKING | Description | RFQ |
---|---|---|---|---|---|---|
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IXFK32N80P |
IXYS | 150 | Tube | MOSFET N-CH 800V 32A TO264AA |
RFQ |
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UF4C120053K4S |
UnitedSiC | 590 | Tube | 1200V/53MOHM, SIC, FAST CASCODE |
RFQ |
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IXFK98N60X3 |
IXYS | 300 | Tube | DISCRETE MOSFET 98A 600V X3 TO26 |
RFQ |
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R6070JNZ4C13 |
Rohm Semiconductor | 600 | Tube | 600V 70A TO-247, PRESTOMOS WITH |
RFQ |
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IXFH90N65X3 |
IXYS | 530 | Tube | MOSFET 90A 650V X3 TO247 |
RFQ |
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6AM13 |
Renesas Electronics America Inc | 1673 | Bulk | N-CHANNEL AND P-CHANNEL, MOSFETS |
RFQ |
VP2206N2 |
Microchip Technology | 184 | Bag | MOSFET P-CH 60V 750MA TO39 |
RFQ |
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2SK1628-E |
Renesas Electronics America Inc | 3302 | Bulk | N-CHANNEL POWER MOSFET |
RFQ |
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BTS240AHKSA1 |
Infineon Technologies | 12798 | Bulk | N-CHANNEL POWER MOSFET |
RFQ |
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FCH029N65S3-F155 |
onsemi | 215 | Tube | MOSFET N-CH 650V 75A TO247-3 |
RFQ |
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IMW65R039M1HXKSA1 |
Infineon Technologies | 133 | Tube | SILICON CARBIDE MOSFET, PG-TO247 |
RFQ |
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R6576ENZ4C13 |
Rohm Semiconductor | 597 | Tube | 650V 76A TO-247, LOW-NOISE POWER |
RFQ |
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IMZA65R039M1HXKSA1 |
Infineon Technologies | 224 | Tube | SILICON CARBIDE MOSFET, PG-TO247 |
RFQ |
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H5N3011P80-E#T2 |
Renesas Electronics America Inc | 4770 | Bulk | N-CHANNEL POWER MOSFET |
RFQ |
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TW060N120C,S1F |
Toshiba Semiconductor and Storage | 165 | Tube | G3 1200V SIC-MOSFET TO-247 60MO |
RFQ |
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TP65H035G4WSQA |
Transphorm | 170 | Tube | 650 V 46.5 GAN FET |
RFQ |
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SIHS90N65E-GE3 |
Vishay Siliconix | 508 | Tube | E SERIES POWER MOSFET SUPER-247 |
RFQ |
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NTH4LN019N65S3H |
onsemi | 400 | Tube | POWER MOSFET, N-CHANNEL, SUPERFE |
RFQ |
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IMW65R030M1HXKSA1 |
Infineon Technologies | 131 | Tube | SILICON CARBIDE MOSFET, PG-TO247 |
RFQ |
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TW027N65C,S1F |
Toshiba Semiconductor and Storage | 180 | Tube | G3 650V SIC-MOSFET TO-247 27MOH |
RFQ |
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