Manufacturer | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Image | PART NUMBER | Manufacturer | IN STOCK | PACKING | Description | RFQ |
---|---|---|---|---|---|---|
![]() |
RF1S9540 |
Harris Corporation | 7199 | Bulk | P-CHANNEL POWER MOSFETS |
RFQ |
![]() |
RFP10P15 |
Harris Corporation | 75487 | Bulk | P-CHANNEL POWER MOSFET |
RFQ |
![]() |
NDP7061 |
Fairchild Semiconductor | 5896 | Tube | MOSFET N-CH 60V 64A TO220-3 |
RFQ |
![]() |
MTV16N50E |
onsemi | 1257 | Bulk | N-CHANNEL POWER MOSFET |
RFQ |
![]() |
FDD14AN06LA0 |
Fairchild Semiconductor | 86251 | Bulk | MOSFET N-CH 60V 9.5A/50A TO252AA |
RFQ |
![]() |
FQB6N90TM |
Fairchild Semiconductor | 3986 | Bulk | N-CHANNEL POWER MOSFET |
RFQ |
![]() |
NP82N04MUG-S18-AY |
Renesas Electronics America Inc | 5850 | Tube | MOSFET N-CH 40V 82A TO220-3 |
RFQ |
![]() |
NP82N04MDG-S18-AY |
NEC Corporation | 4900 | Tube | MOSFET N-CH 40V 82A TO220-3 |
RFQ |
![]() |
IRF224 |
International Rectifier | 2200 | Bulk | N-CHANNEL HERMETIC MOS HEXFET |
RFQ |
![]() |
2SK3116B-ZK-E1-AY |
Renesas Electronics America Inc | 28000 | Bulk | N-CHANNEL POWER MOSFET |
RFQ |
![]() |
2SK3116B-S19-AY |
Renesas Electronics America Inc | 20000 | Bulk | N-CHANNEL POWER MOSFET |
RFQ |
![]() |
2SK3116(1)-ZK-E2-AZ |
Renesas Electronics America Inc | 18400 | Bulk | N-CHANNEL POWER MOSFET |
RFQ |
![]() |
2SK3116B(1)-ZK-E2-AY |
Renesas Electronics America Inc | 11200 | Bulk | N-CHANNEL POWER MOSFET |
RFQ |
![]() |
2SK2133-AZ |
Renesas Electronics America Inc | 9859 | Bulk | N-CHANNEL POWER MOSFET |
RFQ |
![]() |
FDS7766S |
Fairchild Semiconductor | 5000 | Bulk | SMALL SIGNAL N-CHANNEL MOSFET |
RFQ |
![]() |
2SK3740-ZK-E1-AY |
Renesas Electronics America Inc | 4800 | Bulk | N-CHANNEL POWER MOSFET |
RFQ |
![]() |
2SK3116(0)-Z-E1-AZ |
Renesas Electronics America Inc | 4000 | Bulk | N-CHANNEL POWER MOSFET |
RFQ |
![]() |
2SK3740-ZK-E1-AZ |
Renesas Electronics America Inc | 2400 | Bulk | N-CHANNEL POWER MOSFET |
RFQ |
![]() |
N0603N-S23-AY |
Renesas Electronics America Inc | 970 | Tube | MOSFET N-CH 60V 100A TO262 |
RFQ |
![]() |
RJK4006DPD-00#J2 |
Renesas Electronics America Inc | 33000 | Bulk | POWER FIELD-EFFECT TRANSISTOR |
RFQ |
Mainland Office: 4507,Duhuixuan, No.3018 Shennan Avenue,Huahang Community, Huaqiang North Street,Futian District,Shenzhen,China
Hong Kong:FLAT/RM 1101D11/FLIPPO SUN PLAZA28 CANTON ROADTSIM SHA TSUI KL
Tel